| PART |
Description |
Maker |
| HD66137 HD66137T |
From old datasheet system
High-Voltage Durable 240-Channel Common Driver for Dot-Matrix STN LCD
|
HITACHI[Hitachi Semiconductor]
|
| MMBD3004S |
350 mW High Voltage Switching Diode 240 Volts
|
http://
|
| MKP3V120G MKP3V120RLG MKP3V12006 MKP3V240G MKP3V24 |
Sidac High Voltage Bidirectional Triggers 1 AMPERE RMS 120 and 240 VOLTS
|
ON Semiconductor
|
| MKP1V240RLG MKP1V160RLG |
Sidac High Voltage Bidirectional Triggers 0.9 AMPERES RMS 120 − 240 VOLTS 250 V, SIDAC, DO-41
Sidac High Voltage Bidirectional Triggers 0.9 AMPERES RMS 120 − 240 VOLTS 170 V, SIDAC, DO-41
|
ON Semiconductor
|
| ARINC404A |
Durable, rugged construction
|
List of Unclassifed Manufacturers
|
| APT8024B2VR APT8024LVR |
POWER MOS V 800V 33A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| JT-0100-1-17-17 |
Durable and Practical - Class 1 Terminal for Contact Smart Cards
|
Cherry Semiconductor Co...
|
| 2SC4709 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
High-Voltage Amplifier/ High-Voltage Switching Applications
|
Sanyo Semicon Device
Toshiba Semiconductor
|
| 0010894226 10-89-4226 70216-0400 |
2.54mm (.100") Pitch C-Grid庐 Breakaway Header, High Profile, Dual Row, Right Angle,22 Circuits, 6.10mm (.240") Mating Pin Length, 0.76渭m (30渭") Gold (Au) Select
2.54mm (.100) Pitch C-Grid? Breakaway Header, High Profile, Dual Row, Right Angle,22 Circuits, 6.10mm (.240) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective Plating
|
Molex Electronics Ltd.
|
| 0010894142 10-89-4142 A-70216-0240 |
2.54mm (.100") Pitch C-Grid庐 Breakaway Header, High Profile, Dual Row, Right Angle, 14 Circuits, 6.10mm (.240") Mating Pin Length, 0.38渭m (15渭") Gold (Au) Selec
2.54mm (.100) Pitch C-Grid? Breakaway Header, High Profile, Dual Row, Right Angle, 14 Circuits, 6.10mm (.240) Mating Pin Length, 0.38μm (15μ) Gold (Au) Selective Plating
|
Molex Electronics Ltd.
|
